NordAmps

Next Generation of III-V Nanowire Transistors on Silicon for High-Frequency and Sensing Applications

Vertical Nanowire Transistors

Excellent Performance

With High fMAX, Low Noise Figure and Radiation Hardening

Low power consumption

Thanks to its unique vertical geometry and material selection

Cost effective

By an optimized production process integrated on Silicon and a minimized usage of scarce materials for sustainability

Our Vertical Nanowire Transistor Technology

Innovative Transistors

We perfected a process to grow vertical nanostructures using III-V compound semiconductors on silicon. Our InGaAs nanowire transistors offer superior performance in cutoff frequency, noise, and linearity.

High-frequency applications

Enhance your circuit designs with our vertical nanowire transistors, optimized for Cm-Wave & mm-Wave frequencies ranging from 7 GHz to 300 GHz. Our transistor enable high-speed, high-frequency performance essential for advanced applications in 5G, 6G, and high-bandwidth communications.

Low Power Consumption

Unlock unparalleled efficiency with Vertical Nanowire Transistor technology, delivering up to 70% power reduction compared to traditional silicon devices at mmWave frequencies.

Vertical Nanowire Transistor – Key Benefits

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Band gap engineering

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High electron mobility

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Limited voltage dependent parasitic capacitances

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Gate lenght

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Limited use of III-V materials

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No need for high-precision lithography equipment

For more details on each key feature, scroll or slide to the right

Integration with Silicon substrate

For more details on each key feature, scroll or slide to the right

Low thermal budget

For more details on each key feature, scroll or slide to the right

Band gap engineering

Optimizing the transition from InAs in the bottom of the nanowire to InGaAs in the top as well as the composition of the InGaAs shell.

High electron mobility

Allows electrons to traverse the transistor’s core at high speed with less resistance

Limited voltage dependent parasitic capacitances

No charged regions, thereby preventing the formation of parasitic capacitances at junctions.

Gate-All-Around

The gate controls the current through the transistor’s channel from all directions leading to a more effective control of the current.

Gate length

Defined by controlling the gate metal and dielectric deposition, reducing parasitic capacitance and lowering resistances.

HEMT structure in nanowire

Minimizing scattering collisions with ionized defects in the core channel while facilitating high electron mobility through the channel.

Limited use of III-V materials

Grown on top of a silicon substrate. The use of scarce elements like In and Ga is limited to only the nm-sized wires.

No Need for High Precision Lithography Equipment

The transistor is fabricated using a bottom-up process depending on deposition control rather than high-definition photolithography.

Integration with Silicon substrate

Reduced defect propagation probability due to subcritical dimension for crystal defect formation.

Low thermal budget

Nanowire growth conducted at a maximum temperature of 450°C for ~10 minutes.

Doing Business With Us

At the forefront of semiconductor innovation, we proudly offer two transformative services to empower your technology development. Whether you’re driving next-generation device innovation or seeking customized circuit solutions, our offerings are built to meet the demands of the most challenging and ambitious projects.

Technology Licensing -PROCESS DESIGN KIT

Gain exclusive access to our cutting-edge vertical nanowire transistor expertise, designed to accelerate your projects with unprecedented performance and precision.

Custom INTEGRATED Circuit Design & Manufacturing

Leverage our expertise to design and manufacture advanced integrated circuits for your specific applications, ensuring optimized performance and tailored functionality.

Unlocking High-Frequency Potential with Vertical Nanowire Transistors

Our vertical nanowire transistors are designed for advanced cm-Wave and mm-Wave applications, offering performance in high-frequency domains. This technology is ideal for next-generation 5G and 6G communication, automotive radar, satellite communication, and imaging systems, where precision and efficiency are critical.

Cm-Wave & mm-Wave Transciever

  • Low Noise Amplifier
  • Power Amplifier
  • Switch

SATELLITE COMMUNICATION

Cm-Wave & mm-Wave Transciever

  • Low Noise Amplifier
  • Power Amplifier
  • Switch

TELECOMMUNICATION – BASE STATION

Cm-Wave & mm-Wave Transciever

  • Low Noise Amplifier
  • Power Amplifier
  • Switch

TELECOMMUNICATION – TERMINAL

mm-Wave Transciever

  • Low Noise Amplifier
  • Power Amplifier
  • Switch

IMAGING & SENSING

mm-Wave Transciever

  • Low Noise Amplifier
  • Power Amplifier
  • Switch

RADAR

Latest Project Highlights

status: working on it

ARCTIC – Quantum Computing

NordAmps proudly contributes to the ARCTIC project, a groundbreaking initiative to establish a European supply chain for cryogenic photonics, microelectronics, and cryo-microsystems, supporting quantum computing and ICT innovation. By optimizing microelectronic devices and circuits for cryogenic operation, ARCTIC addresses challenges like heat management, signal integrity, and scalability in quantum computing. With 36 partners from 11 countries, ARCTIC accelerates advancements in materials, fabrication, and packaging for next-generation cryo-enabled technologies.

status: working on it

Partner Project – 13.5 GHz LNA

NordAmps is advancing satellite communication with its 13.5 GHz Low Noise Amplifier (LNA), powered by its innovative vertical nanowire transistor technology. Designed for high-frequency precision, this LNA ensures superior signal clarity and efficiency, meeting the demands of modern satellite networks. With cutting-edge engineering, NordAmps drives innovation in satellite communication, delivering unparalleled performance for global connectivity.

status: finished

D-band LNA for 5G/6G

NordAmps’ D-band (within 110 to 170 GHz) Low Noise Amplifier (LNA) technology has been rigorously tested and validated by Ericsson, through a Vinnova-funded project. This collaboration, involving Ericsson, Cadence, and Lund University, aims to advance D-band LNA solutions for 5G/6G Xhaul using NordAmps’ vertical nanowire technology. With Ericsson’s design expertise and NordAmps’ layout execution, the project achieved a D-band LNA with noise cancellation topology, setting a new standard in low-noise amplification.

About us

NordAmps, originally established as a spinoff from Lund University, is a cutting-edge semiconductor company who developped a vertical nanowire transistor. We bring breakthrough high-frequency, energy-efficient transistor technology to the market. The core team comprises highly skilled scientists, engineers, and business professionals with deep expertise in nanophysics, circuit design, and semiconductor fabrication.

With a vision to lead the next generation of high-performance transistors, NordAmps collaborates closely with leading semiconductor companies and maintains strong industry connections through involvement in various European projects.

Building Tomorrow’s Solutions
with Decades of Experience

At NordAmps, our team combines decades of expertise in semiconductors with a strong background in strategic business development and a proven history of innovation through patent contributions. This unique blend of technical skill and market insight enables us to deliver groundbreaking solutions that drive progress in the semiconductor industry.

EMPLOYEES
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Years of experience in Business development
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Our Team

Our team is a group of seasoned experts and innovators dedicated to advancing semiconductor technology and driving high-frequency solutions for 5G, 6G, and beyond. With a deep commitment to research and precision engineering, we deliver groundbreaking and unique Vertical Nanowire Transistor for Cm-Wave & mm-Wave frequencies, creating efficient, high-performance solutions that redefine wireless connectivity.

Lars Tilly,
PhD

CEO – Co-founder

Lars-Erik Wernersson, Prof.

Co-founder

Erik Lind,
Prof

Co-founder

Sven Mattisson,
Adj Pro   

Expert Advisor

Cajsa Wramdemark

CFO

Jan Andersson

CCO

Robert Cadman

VP Sales

Tobias Tired, PhD

COO

Aline Jaimes, PhD

FEM Engineer

Aditya Saxena, PhD

Process Engineer

Asmita Jash, PhD

Process Engineer

Manish Srivastava

ADC/DAC Designer

Simon Olson

Circuit & PDK Designer

Sumita Chinchankar

Office Manager

Pierre Terrien

Marketing Manager

contact

We’re here to help with any questions or inquiries you may have. Fill out the form below, and our team will get back to you promptly. Whether you’re interested in our technology, partnerships, or just want to learn more, we’re ready to connect.