High-Performance LNAs powered by Unique III-V nanowire transistors

Unparalleled performance, above 6 GHz

Collaboration Project between VTT and NordAmps

Strategic partnership to establish scalable production of cutting-edge nanowire-based RF components for communication and sensing applications.

Lund, Sweden / Espoo, Finland – 30/10/2025 – NordAmps, a Swedish semiconductor startup pioneering standing III-V nanowire transistors on silicon, has announced a strategic collaboration with VTT Technical Research Centre of Finland. The partnership aims to set up a production line for NordAmps’ next-generation high-frequency RF components, starting with Low Noise Amplifiers (LNAs).
This collaboration marks a significant step in bridging the gap between research and industrial-scale manufacturing, reinforcing Europe’s leadership in advanced semiconductor and 6G technology development.

Revolutionizing RF Front-Ends with Nanowire Innovation

NordAmps’ proprietary standing III-V nanowire transistor technology enables superior RF performance, combining high speed, energy efficiency, and scalability. By integrating III-V materials on silicon, NordAmps addresses the increasing demand for compact, high-frequency, and sustainable RF electronics that power the future of communication and sensing, from satellite links to autonomous systems and 6G base stations.

“Partnering with VTT is a strong recognition of the high potential of our technology as a breakthrough for the next generation of high-frequency RF front-end components,” said Jan Andersson, CEO of NordAmps. “Together, we are transforming our nanowire transistor innovation into scalable, high-performance products that will shape the future of communication and sensing.”

VTT and NordAmps: Turning Innovation into Industrial Reality

At VTT’s Micronova cleanroom facility, the collaboration will focus on adapting NordAmps’ processes to VTT’s equipment set, paving the way for pilot-scale manufacturing.
This milestone will enable early deliveries to customers, demonstrate industrial scalability, and help establish a European supply chain for advanced RF front-end components.

“At VTT, we see great potential in NordAmps’ transistor technology for the next generation of RF electronics,” said Tauno Vähä-Heikkilä, Vice President, Microelectronics and Quantum Technology at VTT. “We are proud to support NordAmps in refining its breakthrough innovation toward industrial production, perfectly aligned with our mission to turn research into real-world impact.”

Empowering a Sustainable and Competitive European Semiconductor Ecosystem

The collaboration responds to global challenges driving the semiconductor industry: energy efficiency, frequency scaling, and technological sovereignty.
By merging innovation and industrial capability within the Nordic ecosystem, NordAmps and VTT are helping Europe strengthen its position in the global RF and mmWave electronics market.


About NordAmps

NordAmps AB is a Swedish deep-tech company developing high-frequency Low Noise Amplifiers (LNAs) and RF front-end components based on its unique standing III-V nanowire transistor on silicon. This innovation bridges the gap between performance and scalability, enabling a new generation of energy-efficient RF electronics from 6 GHz to mmWave frequencies.

About VTT Technical Research Centre

VTT is one of Europe’s leading research and technology organizations, helping companies and society grow through applied research and innovation. VTT is at the forefront of microelectronics, RF and mmWave technologies, and quantum solutions, driving the transition from lab to fab.

Press Contact

NordAmps AB
Jan Andersson, CEO
📧 jan.andersson@nordamps.com

VTT Technical Research Centre of Finland
Tauno Vähä-Heikkilä, Vice President
📧 tauno.vaha-heikkila@vtt.fi

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