Calls for significantly reduced power consumption both for base stations and battery-operated devices, as well as a reduction in scarce material usage and fewer lithography steps than conventional designs.
Combines the proven benefits of gate all around (GAA) topology with elegant nanotechnology design to expand the distance between gate, source and drain for higher gain. Lower parasitic elements of the proprietary nanotransistor design lead to highest cutoff frequencies for unprecedented speed.
Combines the superior performance of III-V materials with the maturity and cost efficiency of Si CMOS technology. It also significantly reduces the number of process and mask steps for considerable cost savings.
Traditional silicon scaling according to Moore’s law cannot meet the high-performance, low-power needs of high-band 5G, future communication technologies and next-generation advanced microprocessors. While III-V compound semiconductor materials deliver on performance, they are challenging to integrate in devices.
At NordAmps, our nanowire transistor technology gives you the performance of III-V and the manufacturability of silicon. We offer a design kit containing compact models and library files for high-frequency-band 5G applications and beyond. Discover our technology.
Our Partnership with Lund University
Our nanowire transistor technology is rooted in 20 years of research performed within Nanoelectronics at Lund University. To date, the Nanoelectronics has generated several patents involving nanowire growth processes. Key inventions that impact our technology include gate-last fabrication technology, Patent No. US10361284B2.
Lund University is where we got our start. Our lab is located in its facility, and it is the site of continued and future development.