Abstract: Nordic researchers unveil their novel InAs/InGaAs nanowire MOSFETs on Si, which exhibit high-frequency gains for use in a gate-last configuration. The architecture of the device enables highly asymmetric capacitances, increasing its power gain. The authors’ device shows a transit frequency ( fT) of 120 GHz and maximum frequency ( fmax) of 130 GHz, from a channel length (Lg) of 120 nm, demonstrating the state-of-the-art performance of their architecture.
