Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
Abstract: The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb…
Articles
Vertical nanowire MOSFETs exhibiting improved high-frequency gain
Abstract: Nordic researchers unveil their novel InAs/InGaAs nanowire MOSFETs on Si, which exhibit high-frequency gains…
High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm
Abstract: Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high Ion.…
Vertical nanowire III–V MOSFETs with improved high-frequency gain
Abstract: High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the…
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
Abstract: Vertical nanowire n-type (InAs) and p-type (GaSb) transistors are co-processed and co-integrated using a…