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Aug 20, 2020

Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

Abstract: The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb…

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Jun 01, 2020

Vertical nanowire MOSFETs exhibiting improved high-frequency gain

Abstract: Nordic researchers unveil their novel InAs/InGaAs nanowire MOSFETs on Si, which exhibit high-frequency gains…

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Jun 01, 2020

High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm

Abstract: Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high Ion.…

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Apr 01, 2020

Vertical nanowire III–V MOSFETs with improved high-frequency gain

Abstract: High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the…

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Jul 01, 2018

A Self-aligned Gate-last Process applied to All-III-V CMOS on Si

Abstract: Vertical nanowire n-type (InAs) and p-type (GaSb) transistors are co-processed and co-integrated using a…

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