Discover Our Process Design Kit for Vertical InGaAs Nanowire Transistors Today
Our Process Design Kit demonstration starting today. Indeed, we are now offering product demonstrations of the first version of our PDK (Process Design Kit) for vertical InGaAs nanowire transistors. Through the PDK we can offer our customers industrial tools for designing high-performing mmWave circuits in an emerging III-V technology. The PDK supports Cadence design suite and includes scalable PCells for both active and passive devices. It also includes PVS physical verification tool for DRC and LVS, parasitic extraction with both EM-simulator (EMX) and rule-based extraction (QRC), and yield analysis using Monte Carlo simulations.
Then, the nanowire technology offers devices with high frequency performance characterized by high gain and excellent noise figure. It has state-of-the-art performance for applications in wireless communication, sensing, imaging, and satellite communications. Key 5G and 6G circuit blocks have been demonstrated, including Power Amplifiers (PA) and Low Noise Amplifiers (LNA).
For scheduling a Process Design Kit demonstration or learning more about the technology, contact NordAmps CEO at: email@example.com
Discover NordAmps’ Nanowire Transistor Technology for High-Frequency Wireless Communication and Processor Applications
NordAmps was founded in 2016 as a nanotechnology startup from Lund University Nanoelectronics. They developed nanowire transistor technology for high-frequency wireless communication and processor applications. Their unique design combines III-V materials and silicon CMOS-based manufacturing. This results in high-performance and scalable technology that meets the demands of 5G data transfer and logic data processing devices. The technology achieves this with fewer manufacturing steps and less scarce materials.