Sven Mattisson and Anand Murthy joins NordAmps
NordAmps have recently recruited two world authorities in circuit design and semiconductor device design and…
News
SEQUENCE
Nordamps is taking part of the very exciting EU-project SEQUENCE: SEQUENCE is an innovative European…
NordAmps Co-Founder receives ERC Advanced Grant for research on ferroelectric transistors
Lars-Erik Wernersson, professor of nanoelectronics, has received an ERC Advanced Grant for the integration of…
Master’s thesis opportunities
Check out our new interesting master's thesis projects! You can find the postings in the…
Speeding Up Transistors with Nanowire Technology
Vertical Nanowire Transistor Technology from Lund Transistors based on nanowires handle higher frequencies and are…
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
Abstract: The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb…
Vertical nanowire MOSFETs exhibiting improved high-frequency gain
Abstract: Nordic researchers unveil their novel InAs/InGaAs nanowire MOSFETs on Si, which exhibit high-frequency gains…
High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm
Abstract: Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high Ion.…
Vertical nanowire III–V MOSFETs with improved high-frequency gain
Abstract: High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the…
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
Abstract: Vertical nanowire n-type (InAs) and p-type (GaSb) transistors are co-processed and co-integrated using a…